Shanghai Microsystems progresses in deterministic assembly of flexible Si/Ge nanoribbons

Shanghai Microsystems progresses in deterministic assembly of flexible Si/Ge nanoribbons

Recently, the SOI Materials Research Group of the State Key Laboratory of Functional Materials for Materials of the Chinese Academy of Sciences Shanghai Institute of Microsystems and Information Technology has made new progress in the deterministic assembly of flexible Si/Ge nanoribbons. The research group proposed the "Edge-Cutting Transfer" technology, which successfully achieved the controlled transfer and deterministic assembly of flexible Si/Ge nanoribbons on a flexible substrate. Relevant research results were published in the 2015 issue of the “Deterministic Assembly of Flexible Si/Ge Nanoribbons via Edge-Cutting Transfer and Printing for van der Waals Heterojunctions” as Front Cover. The research work also attracted the attention and follow-up report of Materials Views China.

In the implementation of the flexible electronic technology, the functional material on the conventional rigid substrate needs to be transferred to a flexible substrate. However, in the process of material transfer, related materials often have problems such as chaotic arrangement and shift of the array, which poses challenges for the manufacture of subsequent flexible electronic devices. The SOI Materials Research Group of the Shanghai Institute of Microsystems (SOI) focused on Si/Ge nano-films as an example to address the issues in the material transfer process, and proposed a simple and controllable technical approach, namely “edge-shear transfer” technology.

The technology uses patterned SOI/GOI as the source material, and etched the buried oxide layer with HF acid solution to prepare the suspended Si/Ge nanoribbon, and the width of the suspended nanoribbon is controlled by adjusting the etching time; on this basis, the The buried Si/Ge nanoribbons were fixed by the etching boundary of the buried oxide layer to maintain the order of the original patterning sequence. Thus, a flexible Si/Ge nanobelt was successfully prepared in conformity with its arrangement order, and Si/Ge nanometers were realized. With a deterministic assembly on a flexible substrate.

The flexible Si/Ge nano film used in this work has outstanding electrical, optical, thermoelectric, optoelectronic and other physical properties and excellent mechanical flexibility, and is one of the important functional materials in the field of inorganic flexible electronic technology today; this work proposes The "edge-shear transfer" technology can be used to easily and controllably apply flexible inorganic single crystal nano-films to flexible electronic technologies, and is expected to be combined with roll-to-roll technology for scale production.

This work was supported by relevant research projects such as the National Natural Science Foundation of China's Innovative Research Group, the Excellent Youth Fund, and the High-mobility Materials Innovation Research Team of the Chinese Academy of Sciences.

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