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Professor Hiroshi Hiroshi of the Institute of Metal Materials, Tohoku University, Japan has been conducting the following research: using aluminum organometallic complex Al(acac)3 (aluminium acetylacetonate) and oxygen, and then laser irradiation to achieve plasmaization, An active reaction field is formed to form a film of the alumina alpha single crystal phase, and the crystal orientation is optimized. If a semiconductor laser is used in the laser to plasmaize the aluminum gas raw material, the hard alpha phase alumina can be produced at a low temperature and high speed as compared with the current CVD method. Argon gas is used in the carrier gas of the CVD.
This time, the laser was changed from a semiconductor laser to a Nd(钕)-YAG (yttrium aluminum garnet) laser, and the output power was increased to 250 W, which can irradiate the laser in a wide range, thereby optimizing the active field formed by the plasma. Professor Goto said that in the end, "we successfully reduced the film forming temperature by 400 ° C and increased the film forming speed to several 10 to 1000 times." According to Professor Goto, the film formation speed is expected to be as high as several thousand times. The film formation temperature is about 1000K, which is lower than the original method of 1500K.
Alpha alumina is a high-temperature alumina phase with a "Corundum" type crystal structure. It has a small thermal conductivity and good chemical stability even at high temperatures, so it is expected to be a coating for cutting tools such as superhard tools. The range of synthesis of the temperature and Young's modulus of the alpha alumina phase single crystal film formation, the crystal orientation range in which the vaporization temperature of the material gas and the pressure of the sample chamber were controlled as variables were obtained by experiments.
The results of this research are jointly promoted by the Northeastern University and the Research Institute for Sustainable Materials Research, which is a research and development project for the Rare Metal Substituting Materials Development Project of the Ministry of Economy, Trade and Industry, which significantly reduces the use of rare metals W (tungsten). In the experiment of film-forming the bottom plate, alumina was used. Professor Goto said that "the film in the bottom plate of the super-hard tool (WC and Co is the main component) can also be supported."
Based on the research results of the low-temperature high-speed coating on the α-alumina layer, how tool manufacturers can support the productization of super-hard tools will be a major issue in the future. Professor Goto said that in addition to superhard tools, the cladding object "is expected to be a film of cermets whose main component is TiN (titanium nitride)." The plasma-activated film method based on laser CVD can be used in many fields, and this is most noticeable.
Japan has developed a new technology for low-temperature high-speed film formation of alumina coating using laser CVD
The Institute of Metal Materials and the Institute of Industrial Technology of Tohoku University of Japan have made the raw material plasma by laser CVD (Chemical Vapor Deposition) method, and developed a single crystal coating of alumina (Al2O3) at a temperature lower by about 400 °C. A film formation technique is carried out to form a film and increase the film formation speed by several to 1,000 times. If the research results are applied to the hard alumina phase coating of a cutting tool such as a cutter head changeable tool, it is expected to greatly increase the life of the cutting tool, thus attracting widespread attention.